Fluorocarbon high density plasma. VI. Reactive ion etching lag model for contact hole silicon dioxide etching in an electron cyclotron resonance plasma
- 1 May 1994
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 12 (3) , 665-670
- https://doi.org/10.1116/1.578850
Abstract
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