Study of perfection and evolutive mechanism of magnetic Czochralski Si
- 15 July 1990
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (2) , 802-805
- https://doi.org/10.1063/1.346760
Abstract
The growth striation, resistance homogeneity, and oxygen concentration of silicon single crystal grown by both magnetic Czochralski and Czochralski methods were investigated. Theoretical analysis of the experimental results, including effect of magnetic field on the temperature fluctuation, effective segregation coefficient (keff), and oxygen concentration are discussed.This publication has 7 references indexed in Scilit:
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