Effect of donor impurities on the conduction and valence bands of silicon
- 1 January 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (1) , 433-438
- https://doi.org/10.1063/1.329906
Abstract
The energy shifts of valence and conduction band states in silicon due to the interaction of electrons and holes with ionized donors have been calculated by performing a partial wave analysis. The potential is modeled by the Yukawa form with the screening radius determined self-consistently by the Friedel sum rule. The results show that this effect is an important part of the optically measured band-gap narrowing. The variation of the Fermi energy due to this phenomenon is also calculated.This publication has 11 references indexed in Scilit:
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