Gate Electrostatics and Quantum Capacitance of Graphene Nanoribbons

Publisher Website
Google Scholar
Abstract
Capacitance−voltage (C−V) characteristics are important for understanding fundamental electronic structures and device applications of nanomaterials. The C−V characteristics of graphene nanoribbons (GNRs) are examined using self-consistent atomistic simulations. The results indicate strong dependence of the GNR C−V characteristics on the edge shape. For zigzag edge GNRs, highly nonuniform charge distribution in the transverse direction due to edge states lowers the gate capacitance considerably, and the self-consistent electrostatic potential significantly alters the band structure and carrier velocity. For an armchair edge GNR, the quantum capacitance is a factor of 2 smaller than its corresponding zigzag carbon nanotube, and a multiple gate geometry is less beneficial for transistor applications. Magnetic field results in pronounced oscillations on C−V characteristics.
All Related Versions