Rigid-band behavior in tellurium-rich liquid thallium-tellurium alloys
- 15 January 1977
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 15 (2) , 693-698
- https://doi.org/10.1103/physrevb.15.693
Abstract
On carefully excluding data affected by ambipolar transport, we find that the behavior of the electrical conductivity and thermopower in is in accord with a rigid-band model for in the range . As a result, we are able to determine and the dependence of the Fermi energy on and . Using the relation , we find that the density of states for eV, and increases less rapidly than this at larger . Combining this information, we have determined from experimental data the dependence of the hole concentration of and within an undetermined constant factor.
Keywords
This publication has 22 references indexed in Scilit:
- Pseudogap of liquidTl2TePhysical Review B, 1974
- The valence of thallium ions in liquid Tl2Te and Tl2SeSolid State Communications, 1973
- The hall effect in liquid semiconductorsJournal of Physics and Chemistry of Solids, 1972
- Thermoelectric behaviour of molten Tl[sbnd]Te alloys at compositions approaching pure thalliumPhilosophical Magazine, 1970
- The electrical properties of liquid semiconductorsPhilosophical Magazine, 1969
- Electrical conductivity and thermoelectric power of the molten Tl + Se and Tl + Te systemsTransactions of the Faraday Society, 1969
- Hall Measurements in Liquid Thallium-TelluriumPhysical Review B, 1968
- Electric Properties of-Type Liquid Alloys of Thallium and TelluriumPhysical Review B, 1968
- Electronic Properties of Liquid Semiconductor Solutions of Thallium and TelluriumPhysical Review B, 1966
- Thermoelectric Properties of Liquid Semiconductor Solutions of Thallium and TelluriumJournal of Applied Physics, 1965