Time-Resolved Ellipsometry and Reflectivity Measurements of the Optical Properties of Silicon During Pulsed Excimer Laser Irradiation
- 1 January 1984
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Pulsed neodymium: yttrium aluminum garnet laser (532 nm) melting of crystalline silicon: Experiment and theoryApplied Physics Letters, 1983
- Origin of lamellae in radiatively melted silicon filmsApplied Physics Letters, 1983
- Time-resolved optical studies of silicon during nanosecond pulsed-laser irradiationPhysical Review B, 1982
- Time-resolved reflectivity of ion-implanted silicon during laser annealingApplied Physics Letters, 1978