An acoustic SAW/CCD buffer memory device
- 15 December 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (12) , 1025-1027
- https://doi.org/10.1063/1.90255
Abstract
A SAW piezoelectric delay line has been integrated with a silicon charge‐coupled shift register device (CCD) across a 300‐nm gap to produce a fast‐in slow‐out buffer memory. A prototype with an input bandwidth of 40 MHz centered around 107 MHz, an input signal duration time of 3.5 μs, and an output clock rate of 100 kHz has been fabricated and tested. The basic configuration of this SAW/CCD consists of a lithium niobate (LiNbO3) delay line, in close proximity to an array of 300 sampling fingers connected to a 300‐stage buried‐channel CCD on a p‐type silicon susbtrate. The output of the CCD retains both amplitude and phase of the input signal.Keywords
This publication has 0 references indexed in Scilit: