Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors
- 15 February 2003
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 42 (Part 1, No) , 424-425
- https://doi.org/10.1143/jjap.42.424
Abstract
Frequency dispersion of the drain conductance was observed in AlGaN/GaN high electron mobility transistors (HEMTs). The transition frequency shifted to higher frequencies with increasing temperature. The activation energy for the change of the transition frequency was 0.47 eV, which was almost the same as that obtained by the measurement of the temperature dependence of the low-frequency noise.Keywords
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