GaAs/GaAlAs quantum well laser with a lateral spatial variation in thickness grown by metalorganic chemical vapor deposition
- 16 March 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (11) , 635-637
- https://doi.org/10.1063/1.98104
Abstract
A self-aligned GaAs/GaAlAs tapered laser with a tapered quantum well active region is described. The laser is grown by low pressure metalorganic chemical vapor deposition in a horizontal reactor. The effect of the tapered quantum well is in concentrating the injected charges in the modal volume and thus 6.2 mA threshold current is obtained. At a high power level the laser operates in single longitudinal and transversal modes.Keywords
This publication has 6 references indexed in Scilit:
- Selective growth of AlxGa1−xAs embedded in etched grooves on GaAs by low-pressure OMVPEJournal of Crystal Growth, 1986
- High external efficiency (36%) 5-μm mesa isolated GaAs quantum well laser by organometallic vapor phase epitaxyApplied Physics Letters, 1985
- Circuit modeling of the effect of diffusion on damping in a narrow-stripe semiconductor laserIEEE Journal of Quantum Electronics, 1983
- Constricted double-heterojunction AlGaAs diode lasers: Structures and electrooptical characteristicsIEEE Journal of Quantum Electronics, 1981
- Properties of MO-CVD-grown GaAs/GaAlAs lasers as a function of stripewidthIEEE Journal of Quantum Electronics, 1981
- Self-aligned GaAs/GaAIAs semiconductor laser with lateral spatial variation in thickness grown by metalorganic-chemical vapor depositionApplied Physics Letters, 1981