Effects of heat treatment on noise spectrum in Au-InP Schottky barriers

1 October 1981

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 17 (20) , 757-758
https://doi.org/10.1049/el:19810532

Abstract

Measurements are reported on low frequency noise in Au-InP Schottky diodes after heating cycles. An 1/f noise component was dominant in annealing time range before 80 min. Observation of G-R noise spectra are achieved for long-term operations. Noise measurements between 77 K and 300 K have given the time constants and the activation energies of five trapping levels. The G-R processes are attributed to traps due to gold contamination in the depletion region.

Keywords

LOW FREQUENCY NOISE
TIME CONSTANTS
SCHOTTKY DIODES
NOISE SPECTRUM
TRAPPING LEVELS
AU-INP SCHOTTKY BARRIERS
DEPLETION REGION
ACTIVATION ENERGIES
1/F NOISE
77 TO 300K
G-R NOISE SPECTRA
AU CONTAMINATION
HEAT TREATMENT EFFECTS
ANNEALING

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