Experiments on integrated gallium-arsenide f.e.t. oscillators at X band
- 15 May 1975
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 11 (10) , 219-220
- https://doi.org/10.1049/el:19750167
Abstract
Experimental results obtained with GaAs f.e.t. oscillators at X band are described. It is demonstrated that the output power of f.e.t. oscillators is sufficient to drive X band mixers. The noise measure of these oscillators is competitive with Gunn devices, and can be reduced further.Keywords
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