Characterization of interface topography of the buried Si-SiO2 interface in silicon-on-insulator material by atomic force microscopy
- 26 September 1994
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (13) , 1698-1699
- https://doi.org/10.1063/1.112968
Abstract
Atomic force microscopy (AFM) has been used to characterize the topography of the buried Si‐SiO2 interface in Bonded, single‐implant Separation by IMplantation of OXygen (SIMOX), and multiple‐implant SIMOX silicon‐on‐insulator material. The properties of this interface have important implications for processing and for device performance. The root‐mean‐square surface roughness was found to be 11.4 nm for single‐implant material, 2.9 nm for multiple‐implant material, and less than 1.5 nm for bonded material.Keywords
This publication has 1 reference indexed in Scilit:
- Oxidation enhanced dopant diffusion in separation by implantation by oxygen silicon-on-insulator materialApplied Physics Letters, 1994