Thermal instability—The precursor to switching in inhomogeneous thin films

1 November 1979

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 26 (11) , 1766-1771
https://doi.org/10.1109/t-ed.1979.19683

Abstract

Thermal stability criteria capable of explaining Thoma's observations that bias-induced reversible switching transitions in inhomogeneous thin insulating and semiconducting films occur at a critical value of local power density are developed and analyzed. One model, based on a relation between the temperature and heat current, is then applied to specific inhomogeneous thin amorphous chalcogenide films, and good qualitative agreement is shown to exist between theory and experiment.

Keywords

AMORPHOUS MATERIALS
TEMPERATURE
TRANSISTORS
THERMAL STABILITY
THIN FILM
POWER DENSITY
CRYSTALLIZATION
CRITICAL VALUE

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