Excimer laser-processed oxide-passivated silicon solar cells of 19.5-percent efficiency

1 May 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 8 (5) , 249-251
https://doi.org/10.1109/edl.1987.26619

Abstract

Single-crystal p+ -n-n+ silicon solar cells with AM1.5 efficiencies exceeding 19.5 percent have been fabricated using glow-discharge implantation and pulsed excimer laser annealing, together with techniques for reducing the recombination current. These techniques include extrinsic passivation by thermal oxide growth and fine-line photolithography for metallization in order to reduce the area of metal-silicon contact. These are the highest efficiency ion-implanted nonconcentrator cells reported to date and to our knowledge they are the highest efficiency p-on-n cells made by any technique.

Keywords

SILICON
PHOTOVOLTAIC CELLS
ANNEALING
PASSIVATION
OPTICAL PULSES
TEMPERATURE
SURFACE EMITTING LASERS
METALLIZATION
SURFACE DISCHARGES
LASER SINTERING

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