Effect of Thermal Donor Formation on the Photoacoustic Spectra of p-Si Single Crystals
- 1 May 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (5S) , 2570-2572
- https://doi.org/10.1143/jjap.32.2570
Abstract
Photoacoustic (PA) measurements of p-Si single crystals annealed at 450°C were carried out at room temperature near an optical absorption edge. The height of the pronounced peak at 1.07 eV, which appears only in the p-type samples, becomes smaller and disappear with an increase in the annealing time. Since annealing facilitates the thermal donor formation, the decrease in the peak height is explained by the compensation mechanism of the boron acceptors. The reappearance of the 1.07 eV peak with further annealing at 800°C for 30 minutes, where thermal donors are swept away, firmly supports our explanation.Keywords
This publication has 3 references indexed in Scilit:
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- Photoluminescence analysis of annealed silicon crystalsJournal of Applied Physics, 1980