Thermoelectric and Electrical Measurements in the Er-Se System
- 1 November 1965
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (11) , 3490-3495
- https://doi.org/10.1063/1.1703024
Abstract
An evaluation of the electrical conductivity and thermoelectric power for compounds in the Er‐Se system shows that they are degenerate semiconductors. In order to explain the observations in the intrinsic region the number of carriers must be considered as a function of the concentration of the erbium atoms in the compound. Two temperature‐dependent processes take place; the activation of impurity levels and the high‐temperature activation of localized energy levels associated with the number of erbium atoms present.This publication has 6 references indexed in Scilit:
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- The Preparation, Properties, and Crystal Structures of Some Scandium Sulfides in the Range Sc2S3-ScSInorganic Chemistry, 1964
- The electrical properties of alpha ferric oxide—I.Journal of Physics and Chemistry of Solids, 1963
- Electrical Properties of-Physical Review B, 1954
- Theory of Thermoelectric Power in Semiconductors with Applications to GermaniumPhysical Review B, 1953