High power CW operation of InGaAsN lasers at 1.3µm
- 16 September 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (19) , 1643-1644
- https://doi.org/10.1049/el:19991109
Abstract
Room temperature, continuous-wave operation at 1.3 µm is reported for InGaAsN triple quantum well lasers. The layers were grown by MBE using an RF-coupled plasma source for nitrogen. Large broad area lasers exhibit very low threshold current density down to 680 A/cm2 and a slope efficiency of 0.59 W/A (output per two facets). Maximum output powers of 2.4 and 4 W are reached at 10°C under CW and pulsed operation, respectively. These values are a significant improvement over those previously published for lasers in the InGaAsN material system.Keywords
This publication has 2 references indexed in Scilit:
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- 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasersIEEE Photonics Technology Letters, 1998