Comment on ‘‘Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition’’[Appl. Phys. Lett. 5 3, 495 (1988)]
- 16 October 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (16) , 1689
- https://doi.org/10.1063/1.102211
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- InAs monomolecular plane in GaAs grown by flow-rate modulation epitaxyJournal of Applied Physics, 1989
- Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor depositionApplied Physics Letters, 1988
- Photoluminescence from highly-flat-interface InAs/GaAs heterostructures grown by flow-rate modulation epitaxyJournal of Crystal Growth, 1988
- Thermally induced In/Ga interdiffusion in InxGa1−xAs/GaAs strained single quantum well grown by LPMOVPEJournal of Crystal Growth, 1988