Determination of the rate constant for hole injection during current doubling at p-GaAs
- 1 June 1986
- journal article
- research article
- Published by Elsevier in Electrochimica Acta
- Vol. 31 (6) , 731-734
- https://doi.org/10.1016/0013-4686(86)87043-8
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Surface recombination at semiconductor electrodesJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1986
- Surface recombination at semiconductor electrodesJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1985
- The reduction of oxygen at illuminated p-GaPJournal of Electroanalytical Chemistry and Interfacial Electrochemistry, 1985