Quasi-simultaneous solution method: A new highly efficient strategy for numerical MOST simulations
- 1 October 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (10) , 2131-2138
- https://doi.org/10.1109/T-ED.1985.22249
Abstract
Most numerical MOS-simulators are based on Gummel's nonlinear relaxation method, for which severe convergence problems arise above threshold. A new hierarchical approach for the numerical simulation of MOS-transistors (MOST's) is presented, which overcomes these shortcomings resulting in an improvement of convergence speed of more than one order of magnitude.Keywords
This publication has 0 references indexed in Scilit: