Observation of the Fermi edge anomaly in the absorption and luminescence spectra of n-type modulation-doped GaAs-AlGaAs quantum wells
- 1 October 1987
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (10) , 675-678
- https://doi.org/10.1088/0268-1242/2/10/008
Abstract
A well defined sharp peak was observed in the absorption and luminescence spectra near the absorption edge of n-type modulation-doped GaAs-AlxGa1-xAs multiple quantum wells. The peak is assigned as the Fermi edge anomaly similar to the many-body effects in the soft X-ray spectra of metals. As the temperature was raised above 10 K, the peak disappeared, but it was restored by the application of magnetic field. The magnetic field dependence of the peak indicates that it has an excitonic character.Keywords
This publication has 19 references indexed in Scilit:
- Theory of photoabsorption in modulation-doped semiconductor quantum wellsPhysical Review B, 1987
- Photoluminescence in GaAs/AlGaAs quantum wells associated with excited confinement subbandsSolid State Communications, 1986
- Infrared and polarization anomalies in the optical spectra of modulation-doped semiconductor quantum-well structuresPhysical Review Letters, 1986
- Many-body effects in the absorption, gain, and luminescence spectra of semiconductor quantum-well structuresPhysical Review B, 1986
- Theory of excitons in semiconductor quantum wells containing degenerate electrons or holesPhysical Review B, 1985
- Excitons and electron-hole plasma in quasi-two-dimensional systemsJournal of Luminescence, 1985
- Excitons in GaAs quantum wellsJournal of Luminescence, 1985
- Energy-gap discontinuities and effective masses for quantum wellsPhysical Review B, 1984
- Parabolic quantum wells with thesystemPhysical Review B, 1984
- Observation of the excited level of excitons in GaAs quantum wellsPhysical Review B, 1981