Improved-Brooks Mobility Formula for Disorder Scattering in Semiconductor Alloys
- 1 January 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (1R) , 113-116
- https://doi.org/10.1143/jjap.22.113
Abstract
The Green function method is used to study disorder scattering in compound semiconductor alloys, taking into account many-body scattering. The present calculation and the Brooks disorder scattering mobility are compared. For typical semiconductor alloys, the discrepancy is as much as ∼20%, but the error is much smaller for alloys with small band edge difference and effective mass. By using an approximate Green function, an improved Brooks formula is derived in the form of the original Brooks formula multiplied by a correction factor.Keywords
This publication has 10 references indexed in Scilit:
- Evidence for alloy scattering from pressure-induced changes of electron mobility in In
1−
x
Ga
x
As
y
P
1−
y
Electronics Letters, 1980
- Hall Mobility and Hall Factor of In0.53Ga0.47AsJapanese Journal of Applied Physics, 1980
- Electron mobility in AlxGa1−xAsJournal of Applied Physics, 1979
- Theoretical Studies of Disorder Scattering in Compound Semiconductor AlloysJournal of the Physics Society Japan, 1976
- Electron mobility inalloysPhysical Review B, 1974
- Disorder scattering in solid solutions of III–V semiconducting compoundsJournal of Physics and Chemistry of Solids, 1973
- A Systematic Approach to the Problems of Random Lattices. I: A Self-Contained First-Order Approximation Taking into Account the Exclusion EffectProgress of Theoretical Physics, 1968
- Note on Electronic State of Random Lattice. IIProgress of Theoretical Physics, 1966
- ELECTRON MOBILITY IN GaAs1−xPx ALLOYSApplied Physics Letters, 1965
- Electron mobility of indium arsenide phosphide [In(AsyP1−y)]Journal of Physics and Chemistry of Solids, 1959