High Concentration Arsenic Diffusion in Crystalline Silicon: An Asymptotic Analysis

1 May 1987

journal article
Published by Oxford University Press (OUP) in IMA Journal of Applied Mathematics

Vol. 38 (2) , 87-95
https://doi.org/10.1093/imamat/38.2.87

Abstract

For fairly high concentrations, the effective arsenic diffusion coefficient is known to grow linearly with the concentration. In this paper, we consider the strongly enhanced diffusion of arsenic by asymptotic methods, and extend the results of a previous paper (King & Please, 1987) in three ways: we characterize an additional (low-concentration) region; we consider the influence of the initial data; and we consider the case of constant surface concentration.

Keywords

HIGH CONCENTRATION
ASYMPTOTIC ANALYSIS
ARSENIC DIFFUSION
CONCENTRATION ARSENIC
CRYSTALLINE SILICON

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