Ultrafast graded double-heterostructure GaInAs/InP photodiode
- 13 May 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (19) , 2156-2158
- https://doi.org/10.1063/1.104991
Abstract
Ultrafast graded double-heterostructure GaInAs/InP p-i-n photodiodes grown by gas source molecular beam epitaxy have been fabricated on an InP semi-insulating substrate. The graded band-gap layers and the double heterostructure reduce carrier trapping effects and diffusion current and the resulting response of a 5 μm×5 μm device was measured by electro-optic sampling to be 5 ps full width at half maximum (FWHM). The deconvolved impulse response is 3.8 ps FWHM.Keywords
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