Temperature dependence analysis of the thermo-optic effect in silicon by single and double oscillator models
- 15 December 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 88 (12) , 7115-7119
- https://doi.org/10.1063/1.1328062
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Temperature dependence of the thermo-optic coefficient in crystalline silicon between room temperature and 550 K at the wavelength of 1523 nmApplied Physics Letters, 1999
- Temperature dependence of semiconductor band gapsApplied Physics Letters, 1991
- Temperature dependence of the refractive index in semiconductorsJournal of the Optical Society of America B, 1990
- Temperature dependence of the dielectric function and interband critical points in siliconPhysical Review B, 1987
- Precise determination of lattice parameter and thermal expansion coefficient of silicon between 300 and 1500 KJournal of Applied Physics, 1984
- Optical functions of silicon between 1.7 and 4.7 eV at elevated temperaturesPhysical Review B, 1983
- The Standard Thermodynamic Functions for the Formation of Electrons and Holes in Ge, Si, GaAs , and GaPJournal of the Electrochemical Society, 1975
- Theory of the Temperature Derivative of the Refractive Index in Transparent CrystalsPhysical Review B, 1973
- Temperature Dependence of Energy Gaps of Some III-V SemiconductorsPhysical Review B, 1972
- Temperature dependence of the energy gap in semiconductorsPhysica, 1967