X-ray mask distortion correction technology using pattern displacement simulator

Abstract
A new method to correct x‐ray mask distortion was developed. This method uses the correction method of previous analysis of distortion and transformation of coordinates (PAT) and a simulator to calculate pattern displacement caused during backetching. The key advantages of using PAT with a simulator are that no extra time, substrates, or labor are required to fabricate send‐ahead masks. Using this correction method, it was confirmed that the 3σ value of the pattern placement error was reduced to below 76 nm. This indicated that PAT with a pattern displacement simulator was as useful for improving the pattern placement accuracy of x‐ray masks as PAT with send‐ahead masks. In addition, analysis of the remaining error made it clear that the correction error was mainly caused by the lack of e‐beam writing accuracy.

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