Isoelectronic Double Doping Effect on Dislocation Density of InP Single Crystal
- 1 February 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (2A) , L72
- https://doi.org/10.1143/jjap.23.l72
Abstract
A Ga+Sb doping technique is proposed for reducing the dislocation density in LEC-InP crystals. Using SSMS and SIMS measurements, effective distribution coefficients of Ga and Sb in InP are estimated to be 3.35 and 0.12, respectively. Effectiveness of uniform Ga+Sb concentration doping all along the growth direction is presented. Nearly dislocation-free InP crystals 25 mm in diameter are prepared using Ga+Sb doping concentration above 6×1018 cm-3.Keywords
This publication has 3 references indexed in Scilit:
- Dislocation-free GaAs and InP crystals by isoelectronic dopingJournal of Crystal Growth, 1983
- X-ray topographic observation of dislocation generation and propagation in InP single crystal grown by the liquid-encapsulated Czochralski techniqueJournal of Applied Physics, 1983
- Impurity effect on grown-in dislocation density of InP and GaAs crystalsJournal of Applied Physics, 1978