Modelling of extremely high concentration erbium-doped silica waveguides

• 4 March 1993
• journal article
• Published by Institution of Engineering and Technology (IET) in Electronics Letters
• Vol. 29  (5) , 495-496
• https://doi.org/10.1049/el:19930331

Abstract

Keywords

• THREE LEVEL LASER SYSTEM
• QUENCHING CONCENTRATION
• SIO2:ER
• PLANAR WAVEGUIDES
• INTEGRATED OPTICAL WAVEGUIDE AMPLIFIERS
• ER DOPED SILICA
• DISSIPATIVE ION-ION INTERACTIONS
• HIGH CONCENTRATION
• MODEL