Calculation of microwave performance of buffer layer gate GaAs MESFET's
- 1 May 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 25 (5) , 537-539
- https://doi.org/10.1109/T-ED.1978.19123
Abstract
The microwave performance of a GaAs MESFET, where a buffer layer of a low carrier concentration is inserted between the gate metal and the channel layer, is calculated and compared with that of a conventional MESFET. It is found that the use of such a high-resistivity buffer layer contributes to a great improvement of the microwave performance of the GaAs MESFET, especially in fTandf_{\max}.Keywords
This publication has 0 references indexed in Scilit: