Characteristics of MOS devices in electron beam-recrystallized silicon on insulator
- 1 January 1982
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 429-432
- https://doi.org/10.1109/iedm.1982.190316
Abstract
N-channel MOS devices have been fabricated in an electron beam-recrystallized silicon film on a Si3N4/SiO2/Keywords
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