Modeling and characterization of noise of polysilicon emitter bipolar transistors
- 4 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 34, 236-238
- https://doi.org/10.1109/bipol.1990.171172
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- The effect of fluorine in silicon dioxide gate dielectricsIEEE Transactions on Electron Devices, 1989
- Flicker (1/f) noise generated by a random walk of electrons in interfacesIEEE Transactions on Electron Devices, 1987
- An investigation of the thermal stability of the interfacial oxide in polycrystalline silicon emitter bipolar transistors by comparing device results with high-resolution electron microscopy observationsJournal of Applied Physics, 1987