The influence of free carriers on the equilibrium lattice parameter of semiconductor materials
- 16 November 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 80 (1) , 165-172
- https://doi.org/10.1002/pssa.2210800118
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Absolute Hydrostatic Deformation Potentials of Tetrahedral SemiconductorsPhysica Status Solidi (b), 1982
- The Validity of Vegard's Rule for the Solid Solution System Bi1−xSbxPhysica Status Solidi (b), 1982
- Lattice Parameter Study in the Bi1–xSbx Solid‐solution SystemCrystal Research and Technology, 1982
- Influence of the Lattice Distortion on the Screening of an ImpurityPhysica Status Solidi (b), 1975
- Bonding and Antibonding Potentials in Group-IV SemiconductorsPhysical Review Letters, 1975
- Quantum-Defect Electronegativity Scale for Nontransition ElementsPhysical Review Letters, 1974
- New Set of Tetrahedral Covalent RadiiPhysical Review B, 1970
- Self-Consistent Orthogonalized-Plane-Wave Band Calculation on GaAsPhysical Review B, 1970
- Lattice Distorsion around Charged Impurity in SemiconductorsJournal of the Physics Society Japan, 1964
- Die Gitterkonstanten der Gold-SilberlegierungenThe European Physical Journal A, 1930