Nitridation and subsequent oxidation process of Si(111) and (100) surfaces for high-density Si pillar formation
- 1 June 1997
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 117-118, 131-135
- https://doi.org/10.1016/s0169-4332(97)80066-9
Abstract
No abstract availableFunding Information
- Murata Science Foundation
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 5 references indexed in Scilit:
- Nanometer-scale local oxidation of silicon using silicon nitride islands formed in the early stages of nitridationApplied Physics Letters, 1996
- Thermal Nitridation of Si(111) Surfaces with N2 Molecules Studied by X-Ray Photoelectron SpectroscopyJapanese Journal of Applied Physics, 1995
- Reactive crystal growth in two dimensions: Silicon nitride on Si(111)Physical Review B, 1995
- Reaction of Oxygen with Si(111) and (100): Critical Conditions for the Growth of SiO2Journal of the Electrochemical Society, 1982
- Topology of Silicon Structures with Recessed SiO2Journal of the Electrochemical Society, 1976