Heterojunction band discontinuity control by ultrathin intralayers
- 15 November 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (10) , 1092-1094
- https://doi.org/10.1063/1.96339
Abstract
We present evidence that the band lineup at a semiconductor-semiconductor heterojunction interface can be changed and potentially controlled by an ultrathin metal intralayer. Synchrotron-radiation photoemission experiments demonstrate that 0.5–2-Å-thick Al intralayers increase the valence-band discontinuity of CdS-Ge and CdS-Si heterojunctions by 0.15 eV on the average.Keywords
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