On the DLTS‐characterization of dislocation states in silicon
- 1 January 1981
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 16 (2) , 197-202
- https://doi.org/10.1002/crat.19810160213
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Electronic defect levels in self-implanted cw laser-annealed siliconApplied Physics Letters, 1979
- Defect states associated with dislocations in siliconApplied Physics Letters, 1979
- Recombination at dislocationsSolid-State Electronics, 1978
- Theory of Carrier Recombination at Dislocations in GermaniumPhysica Status Solidi (b), 1964