Peak temperature in high-power chips
- 1 April 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (4) , 902-907
- https://doi.org/10.1109/16.52423
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Thermal design studies of high-power heterojunction bipolar transistorsIEEE Transactions on Electron Devices, 1989
- Green’s Function Partitioning Procedure Applied to Foil Heat Flux GagesJournal of Heat Transfer, 1987
- A new approach to thermal analysis of power devicesIEEE Transactions on Electron Devices, 1987
- Steady-state junction temperatures of semiconductor chipsIEEE Transactions on Electron Devices, 1972