Grain Growth and Electrical Properties in ZnO Varistors with Various Valence States of Additions

Publisher Website
Google Scholar
Abstract
Grain growth and electrical properties in ZnO system with various valence states of manganese and cobalt were studied. The results were discussed by means of defects produced by the additions. The grain growth was analyzed from the kinetic grain growth equation: G n =D texp (-E/R T). In this work, the grain growth kinetic exponent n was 6 and activation energy was 230±21 kJ/mol. The grain size increased with the valence states of manganese and cobalt. The compositions with lower trap density have higher nonlinear coefficient, higher voltage ratio and lower leakage current. The varistor properties were improved by increasing the sintering temperature and time because of the more obvious tunneling effect.

This publication has 17 references indexed in Scilit: