InxGa1−xAsyP1−y alloy stabilization by the InP substrate inside an unstable region in liquid phase epitaxy
- 15 February 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 40 (4) , 325-326
- https://doi.org/10.1063/1.93078
Abstract
A series of growths from the liquid phase have shown clearly that a large miscibility gap exists in the InxGa1−xAsyP1−y system at relatively high temperatures. The germinations were performed on (100) GaP. Using (100) InP as a substrate, it is shown that the lattice‐matched solids are stabilized. This result is believed to be associated with the strain energy induced by the substrate.Keywords
This publication has 6 references indexed in Scilit:
- The crystallization path: A way to the GaxIn1-xAsyP1-yphase diagramIEEE Journal of Quantum Electronics, 1981
- Composition dependence of the band gaps of In1−xGaxAs1−yPy quaternary solids lattice matched on InP substratesJournal of Applied Physics, 1978
- Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μmApplied Physics Letters, 1978
- Calculation of ternary and quaternary III–V phase diagramsJournal of Crystal Growth, 1974
- Phase equilibria in III–V quaternary systems—application to Al-Ga-P-AsJournal of Physics and Chemistry of Solids, 1974
- The importance of lattice mismatch in the growth of GaxIn1−xP epitaxial crystalsJournal of Applied Physics, 1972