Conversion of GaAs to GaP by Solid-State Diffusion
- 1 September 1962
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 33 (9) , 2795-2797
- https://doi.org/10.1063/1.1702551
Abstract
The formation of discrete phase GaP by diffusion of phosphorus into GaAs at pressures of 10 to 30 atm and temperatures of 800° to 900°C is described. X‐ray data identifying GaP are given. A mechanism is postulated for the step‐like concentration gradients observed. Striae supporting this hypothesis were observed and are illustrated. Epitaxial growth as a factor is considered but not believed a significant factor based on microscopy and experimental environment.This publication has 0 references indexed in Scilit: