Field-Effect Transistors on Tetracene Single Crystals

We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of $0.4 \ cm^2/Vs$, higher than in the best crystalline thin-film transistors of the same material. The non-monotonous temperature dependence of the mobility, its weak gate voltage dependence, as well as the device stability confirm the high quality of single-crystal devices. This is due to the fabrication process that does not substantially affect the crystal quality.