Current Transport, Effective Dielectric Constant, and Temperature of Ta2 O5 Thin Films
- 15 November 1971
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 19 (10) , 403-405
- https://doi.org/10.1063/1.1653747
Abstract
The I‐V characteristics of Ta–Ta2O5–Au thin‐film devices indicate high temperatures and large dielectric constants for both Schottky and Poole‐Frenkel dominated conduction. The effects of space charge and electron effective mass are also indicated.Keywords
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