γ Ray Irradiation Effect on Thermally Oxidized Si P–N Junction
- 1 September 1962
- journal article
- Published by Physical Society of Japan in Journal of the Physics Society Japan
- Vol. 17 (9) , 1521-1522
- https://doi.org/10.1143/jpsj.17.1521
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- N Type Conversion of Thermally Oxidized Si SurfaceJournal of the Physics Society Japan, 1962
- 1/f Noise and Channel in Ge PN JunctionJournal of the Physics Society Japan, 1960