Electron transport across depleted region of a fine-gate GaAs:AlGaAs heterojunction FET

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Abstract
The low-temperature characteristics of a depleted GaAs AlGaAs heterojunction FET with gate length of 1000 Å and width 10 μm show that the current is initially space-charge- limited. The onset of velocity saturation is observed as the source-drain bias is increased. The structure in the differential of resistance is attributed to the emission of optic phonons by hot electrons.