Time Dependence of Charge Transport in MIS Memory Transistors

15 February 1972

journal article
conference paper
Published by AIP Publishing in Applied Physics Letters

Vol. 20 (4) , 149-150
https://doi.org/10.1063/1.1654085

Abstract

Based on the direct tunneling model, the complete solution is obtained for the charge-transport equation for MIS memory transistors. It is shown that the time dependence is linear in the microsecond range, roughly logarithmic in the millisecond range, and eventually saturates to a value determined by the physical characteristics of the device. For an oxide layer 20 Å thick, the theory predicts a switching time of about 45 μsec and saturation in about 150 sec.

Keywords

CHARGE TRANSPORT
MODEL
MEMORY
MIS
TRANSISTORS
THICK
EVENTUALLY
MICROSECOND
MILLISECOND

This publication has 2 references indexed in Scilit:

Theory of the thin-oxide m.n.o.s. memory transistor
Electronics Letters, 1970
Tunnel mechanism in MNOS structures
Physica Status Solidi (a), 1970