550 GHz bandwidth photodetector on low-temperaturegrown molecular-beamepitaxial GaAs
- 8 January 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (1) , 119-120
- https://doi.org/10.1049/el:19980039
Abstract
The authors demonstrate that a 550 GHz bandwidth photodetector can be fabricated on low-temperature grown MBE GaAs. The pulse response shows 0.4 and 0.6 ps rise and fall times, respectively. The bandwidth is in agreement with a value calculated using a carrier lifetime of 0.2 ps, measured by femtosecond time-resolved reflectivity, and a capacitance of 0.014 fF/µm2, determined from microwave measurements. The device bandwidth is RC limited.Keywords
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