Monolayer and Bilayer High Steps on Si(001)2×1 Vicinal Surface

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Abstract
Atomic steps on Si(001)2×1 surfaces are observed by reflection electron microscopy. On the Si(001)2×1 vicinal surface having the inclination of 0.01°-0.1° towards the [100], the 2×1 and 1×2 domains are formed alternately, being separated by a monolayer-high step. The width of the terrace varies systematically from domain to domain. This is explained by the fact that the dimers tend to aligh parallel to the step, running along the [110] or [1̄10] direction; the domain in which the dimers are aligned parallel to the step expands and the other domain shrinks.