Ab Initio Study of Intrinsic Point defects and Dopant-defect Complexes in SiC: Application to Boron Diffusion
- 10 May 2000
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 338-342, 949-952
- https://doi.org/10.4028/www.scientific.net/msf.338-342.949
Abstract
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