A two-dimensional model for the kink in nMOSTs operating at liquid helium temperatures
- 13 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 123-127
- https://doi.org/10.1109/ltse.1989.50195
Abstract
A model for the kink in MOSTs (MOS transistors) operating at liquid-helium temperatures is presented. It is based on a calculation of the multiplication current as a function of temperature. Subsequently the increase in substrate potential and in drain current is determined, taking account of the current flow through the highly resistive, frozen-out substrate/well. This model makes it possible to explain the temperature and geometry dependence of the kink and can be extended to the case of (cryogenic) SOI (silicon on insulator). With this model it is possible to evaluate and optimize the influence of technological and design parameters for cryogenic applications. It is expected that the well/contact separation plays a crucial role in kink behavior; furthermore, different behavior is expected for n-well technology compared with p-well.Keywords
This publication has 11 references indexed in Scilit:
- Influence of substrate freeze-out on the characteristics of MOS transistors at very low temperaturesPublished by Elsevier ,2002
- Freeze-out effects on NMOS transistor characteristics at 4.2 KIEEE Transactions on Electron Devices, 1989
- The influence of the drain multiplication current on latchup behaviorIEEE Transactions on Electron Devices, 1988
- Model for hysteresis and kink behavior of MOS transistors operating at 4.2 KIEEE Transactions on Electron Devices, 1988
- Two- and three-dimensional calculation of substrate resistanceIEEE Transactions on Electron Devices, 1988
- Operation of bulk CMOS devices at very low temperaturesIEEE Journal of Solid-State Circuits, 1986
- Transient response of n-channel metal-oxide-semiconductor field-effect transistors during turnon at 10–25 °KJournal of Applied Physics, 1982
- Time dependence of depletion region formation in phosphorus-doped silicon MOS devices at cryogenic temperaturesJournal of Applied Physics, 1979
- A new approach to the theory and modeling of insulated-gate field-effect transistorsIEEE Transactions on Electron Devices, 1977
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964