Yttrium oxide based metal-insulator-semiconductor structures on silicon
- 15 March 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 170 (2) , 185-189
- https://doi.org/10.1016/0040-6090(89)90723-2
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Yttrium oxide/silicon dioxide: a new dielectric structure for VLSI/ULSI circuitsIEEE Electron Device Letters, 1988
- Study of thermally oxidized yttrium films on siliconApplied Physics Letters, 1987
- Oxidation temperature dependence of the dc electrical conduction characteristics and dielectric strength of thin Ta2O5 films on siliconJournal of Applied Physics, 1986
- Electrical properties of amorphous tantalum pentoxide thin films on siliconJournal of Applied Physics, 1983