Investigation of oxide particles in Czochralski silicon heat treated for intrinsic gettering using scanning infrared microscopy

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Abstract
The precipitation of oxygen in Czochralski silicon slices and the effect of the resulting oxide particles on the gettering of copper have been investigated. The scanning infrared microscope was used to investigate individual particles within the bulk slices. Quantitative data on particle densities and distributions, and surface denuded zone depths for low particle densities were obtained. A major change in the precipitation behavior of copper was observed on going from just below to just above the threshold oxide precipitation level for gettering to occur.